Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser

Submilliamp Threshold InGaAs-GaAs Strained Layer Quantum-Well Laser

Strained layer InGaAs-GaAs single-quantum-well buried heterostructure lasers were fabricated by a hybrid molecular beam epitaxy and liquid phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser ( L = 425 pm) and 0.75 mA for a coated laser ( R 0.9, L = 198 pm), were obtained. A 3 dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA).

Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser

Data are presented showing that, besides the improvement in carrier collection, it is advantageous to locate strain-matching auxiliary InGaAs layers @quantum wells ~QWs!# within tunneling distance of a single-quantum-dot ~QD! layer of an AlGaAs–GaAs–InGaAs–InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. The QD density is changed from 2310/cm for...

Temperature Analysis and Characteristics of Highly Strained InGaAs – GaAsP – GaAs ( > 1 . 17 m ) Quantum - Well Lasers

Characteristic temperature coefficients of the threshold current ( 0) and the external differential quantum efficiency ( 1) are studied as simple functions of the temperature dependence of the physical parameters of the semiconductor lasers. Simple expressions of characteristics temperature coefficients of the threshold current ( ) and the external differential quantum efficiency ( 1) are expre...

Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well

Differential gain and damping factor in strained InGaAs/GaAs quantum well lasers

The differential gain, modulation response, and damping rate of strained-layer Ino•3Ga(J•7As multiple quantum well (MQW) short cavity graded-index separate confmement heterostrucutre (GRINSCH) and SCH lasers fabricated by chemically-assisted ion beam etching (CAIBE) are analyzed. Calculated differential gains vary from 0.7 to. 1 .6 x 1015 cm2, with only relatively long lasers of 400 p.m demonst...